P-Channel MOSFET, 2.7 A, 150 V, 8-Pin Power 33 onsemi FDMC86261P

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	P
	Maximum Continuous Drain Current	2.7 A
	Maximum Drain Source Voltage	150 V
	Package Type	Power 33
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	269 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	40 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-25 V, +25 V
	Number of Elements per Chip	1
	Length	3.3mm
	Typical Gate Charge @ Vgs	17 nC @ 10 V
	Width	3.3mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Height	0.725mm
	Series	PowerTrench
	Minimum Operating Temperature	-55 °C

	Select all
	Brand ON Semiconductor
	Channel Type P
	Maximum Continuous Drain Current 2.7 A
	Maximum Drain Source Voltage 150 V
	Package Type Power 33
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 269 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 40 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -25 V, +25 V
	Number of Elements per Chip 1
	Length 3.3mm
	Typical Gate Charge @ Vgs 17 nC @ 10 V
	Width 3.3mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Height 0.725mm
	Series PowerTrench
	Minimum Operating Temperature -55 °C

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