PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	P
	Maximum Continuous Drain Current	12 A
	Maximum Drain Source Voltage	12 V
	Series	PowerTrench
	Package Type	MicroFET 2 x 2
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	16 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.4V
	Maximum Power Dissipation	2.4 W, 900 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-8 V, +8 V
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	24 nC @ 4.5 V
	Length	2.05mm
	Width	2.05mm
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Height	0.775mm

	Select all
	Brand onsemi
	Channel Type P
	Maximum Continuous Drain Current 12 A
	Maximum Drain Source Voltage 12 V
	Series PowerTrench
	Package Type MicroFET 2 x 2
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 16 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.4V
	Maximum Power Dissipation 2.4 W, 900 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -8 V, +8 V
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 24 nC @ 4.5 V
	Length 2.05mm
	Width 2.05mm
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Height 0.775mm

onsemi PowerTrench P-Channel MOSFET, 12 A, 12 V, 6-Pin MicroFET 2 x 2 FDMA908PZ

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

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