Dual N/P-Channel MOSFET, 20 A, 40 V, 5-Pin DPAK onsemi FDD8424H_F085A

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Specifications

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Legislation and Compliance

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N, P
	Maximum Continuous Drain Current	20 A
	Maximum Drain Source Voltage	40 V
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	5
	Maximum Drain Source Resistance	37 mΩ, 80 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	30 W, 35 W
	Transistor Configuration	Common Drain
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	2
	Maximum Operating Temperature	+150 °C
	Length	6.73mm
	Typical Gate Charge @ Vgs	14 nC @ 10 V, 17 nC @ 10 V
	Width	6.22mm
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Series	PowerTrench
	Height	2.39mm

	Select all
	Brand ON Semiconductor
	Channel Type N, P
	Maximum Continuous Drain Current 20 A
	Maximum Drain Source Voltage 40 V
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 5
	Maximum Drain Source Resistance 37 mΩ, 80 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 30 W, 35 W
	Transistor Configuration Common Drain
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 2
	Maximum Operating Temperature +150 °C
	Length 6.73mm
	Typical Gate Charge @ Vgs 14 nC @ 10 V, 17 nC @ 10 V
	Width 6.22mm
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Series PowerTrench
	Height 2.39mm

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