N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 onsemi FCP190N60_GF102
- RS Stock No.:
- 864-7900
- Mfr. Part No.:
- FCP190N60_GF102
- Brand:
- ON Semiconductor
Discontinued
- RS Stock No.:
- 864-7900
- Mfr. Part No.:
- FCP190N60_GF102
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 199 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 208 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 57 nC @ 10 V | |
| Width | 4.672mm | |
| Series | SuperFET II | |
| Height | 15.215mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 199 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 208 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 57 nC @ 10 V | ||
Width 4.672mm | ||
Series SuperFET II | ||
Height 15.215mm | ||
Minimum Operating Temperature -55 °C | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.