onsemi PowerTrench N-Channel MOSFET, 7.5 A, 150 V, 8-Pin SOIC FDS86240
- RS Stock No.:
- 864-4970
- Mfr. Part No.:
- FDS86240
- Brand:
- ON Semiconductor
Bulk discount available
Subtotal (1 reel of 2500 units)*
£1,900.00
(exc. VAT)
£2,275.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | £0.76 | £1,900.00 |
| 12500 - 22500 | £0.741 | £1,852.50 |
| 25000 + | £0.722 | £1,805.00 |
*price indicative
- RS Stock No.:
- 864-4970
- Mfr. Part No.:
- FDS86240
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7.5 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 35 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 28 nC @ 10 V | |
| Length | 4.9mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 3.9mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.575mm | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.5 A | ||
Maximum Drain Source Voltage 150 V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 28 nC @ 10 V | ||
Length 4.9mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 3.9mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.575mm | ||