N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK onsemi HUFA76419D3ST

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	20 A
	Maximum Drain Source Voltage	60 V
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	37 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	75 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Width	6.22mm
	Typical Gate Charge @ Vgs	23 nC @ 10 V
	Length	6.73mm
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Series	UltraFET
	Height	2.39mm

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 20 A
	Maximum Drain Source Voltage 60 V
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 37 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 75 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Width 6.22mm
	Typical Gate Charge @ Vgs 23 nC @ 10 V
	Length 6.73mm
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Series UltraFET
	Height 2.39mm

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