Name: N-Channel MOSFET, 2.6 A, 55 V, 3 + Tab-Pin SOT-223 onsemi HUFA75307T3ST
Brand: ON Semiconductor
SKU: 862-9328
Price: 0.17 GBP
Availability: Discontinued

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	2.6 A
	Maximum Drain Source Voltage	55 V
	Package Type	SOT-223
	Mounting Type	Surface Mount
	Pin Count	3 + Tab
	Maximum Drain Source Resistance	90 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	1.1 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Length	6.7mm
	Typical Gate Charge @ Vgs	14 nC @ 20 V
	Transistor Material	Si
	Width	3.7mm
	Number of Elements per Chip	1
	Series	UltraFET
	Minimum Operating Temperature	-55 °C
	Height	1.8mm

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 2.6 A
	Maximum Drain Source Voltage 55 V
	Package Type SOT-223
	Mounting Type Surface Mount
	Pin Count 3 + Tab
	Maximum Drain Source Resistance 90 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 1.1 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Length 6.7mm
	Typical Gate Charge @ Vgs 14 nC @ 20 V
	Transistor Material Si
	Width 3.7mm
	Number of Elements per Chip 1
	Series UltraFET
	Minimum Operating Temperature -55 °C
	Height 1.8mm

N-Channel MOSFET, 2.6 A, 55 V, 3 + Tab-Pin SOT-223 onsemi HUFA75307T3ST

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