Name: N-Channel MOSFET, 56 A, 100 V, 3-Pin D2PAK onsemi HUFA75639S3ST
Brand: ON Semiconductor
SKU: 862-9321
Price: 0.38 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	56 A
	Maximum Drain Source Voltage	100 V
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	25 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	200 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	9.65mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	110 nC @ 20 V
	Length	10.67mm
	Maximum Operating Temperature	+175 °C
	Height	4.83mm
	Minimum Operating Temperature	-55 °C
	Series	UltraFET

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 56 A
	Maximum Drain Source Voltage 100 V
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 25 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 200 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 9.65mm
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 110 nC @ 20 V
	Length 10.67mm
	Maximum Operating Temperature +175 °C
	Height 4.83mm
	Minimum Operating Temperature -55 °C
	Series UltraFET

N-Channel MOSFET, 56 A, 100 V, 3-Pin D2PAK onsemi HUFA75639S3ST

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