STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STH150N10F7-2
- RS Stock No.:
- 860-7523P
- Mfr. Part No.:
- STH150N10F7-2
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£28.30
(exc. VAT)
£34.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 25 June 2026
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Units | Per unit |
|---|---|
| 10 - 18 | £2.83 |
| 20 - 48 | £2.55 |
| 50 - 98 | £2.295 |
| 100 + | £2.185 |
*price indicative
- RS Stock No.:
- 860-7523P
- Mfr. Part No.:
- STH150N10F7-2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 110 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | H2PAK-2 | |
| Series | DeepGate, STripFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.4mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 10.57mm | |
| Typical Gate Charge @ Vgs | 117 nC @ 10 V | |
| Height | 4.8mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type H2PAK-2 | ||
Series DeepGate, STripFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.4mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 10.57mm | ||
Typical Gate Charge @ Vgs 117 nC @ 10 V | ||
Height 4.8mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics