N-Channel MOSFET, 120 mA, 600 V, 3 + Tab-Pin SOT-223 Infineon BSP125H6433XTMA1

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RS Stock No.:
857-8497
Mfr. Part No.:
BSP125H6433XTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Drain Source Resistance

45 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.5mm

Typical Gate Charge @ Vgs

4.4 nC @ 10 V

Length

6.5mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C

Series

SIPMOS

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.