N-Channel MOSFET, 3.2 A, 700 V, 3-Pin IPAK Infineon IPS65R1K4C6AKMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

3.2 A

Maximum Drain Source Voltage

700 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

2.39mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

10.5 nC @ 10 V

Height

6.22mm

Series

CoolMOS C6

Minimum Operating Temperature

-55 °C