Infineon CoolMOS™ C6 N-Channel MOSFET, 10.6 A, 700 V, 3-Pin I2PAK IPI65R380C6XKSA1
- RS Stock No.:
- 857-6722
- Mfr. Part No.:
- IPI65R380C6XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 500 units)*
£461.50
(exc. VAT)
£554.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Tube* |
|---|---|---|
| 500 - 500 | £0.923 | £461.50 |
| 1000 - 2000 | £0.899 | £449.50 |
| 2500 + | £0.876 | £438.00 |
*price indicative
- RS Stock No.:
- 857-6722
- Mfr. Part No.:
- IPI65R380C6XKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10.6 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | I2PAK (TO-262) | |
| Series | CoolMOS™ C6 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 380 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 83 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 39 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.57mm | |
| Transistor Material | Si | |
| Height | 9.45mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 10.6 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type I2PAK (TO-262) | ||
Series CoolMOS™ C6 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 380 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 39 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 4.57mm | ||
Transistor Material Si | ||
Height 9.45mm | ||
Minimum Operating Temperature -55 °C | ||
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