N-Channel MOSFET, 83 A, 150 V, 3-Pin I2PAK Infineon IPI111N15N3GAKSA1
- RS Stock No.:
- 857-4650
- Mfr. Part No.:
- IPI111N15N3GAKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 500 units)*
£980.00
(exc. VAT)
£1,175.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 500 - 500 | £1.96 | £980.00 |
| 1000 - 2000 | £1.679 | £839.50 |
| 2500 + | £1.637 | £818.50 |
*price indicative
- RS Stock No.:
- 857-4650
- Mfr. Part No.:
- IPI111N15N3GAKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 83 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | I2PAK (TO-262) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 214 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 4.52mm | |
| Typical Gate Charge @ Vgs | 41 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.36mm | |
| Number of Elements per Chip | 1 | |
| Series | OptiMOS 3 | |
| Height | 9.45mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 83 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type I2PAK (TO-262) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 214 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 4.52mm | ||
Typical Gate Charge @ Vgs 41 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.36mm | ||
Number of Elements per Chip 1 | ||
Series OptiMOS 3 | ||
Height 9.45mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt