N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK Infineon IPD060N03LGATMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

6.73mm

Width

6.22mm

Transistor Material

Si

Height

2.41mm

Minimum Operating Temperature

-55 °C

Series

OptiMOS 3