Infineon OptiMOS™ N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK IPB80N06S207ATMA1

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Subtotal (1 reel of 1000 units)*

£832.00

(exc. VAT)

£998.00

(inc. VAT)

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Per Reel*
1000 - 1000£0.832£832.00
2000 - 4000£0.802£802.00
5000 +£0.792£792.00

*price indicative

RS Stock No.:
857-4506
Mfr. Part No.:
IPB80N06S207ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

86 nC @ 10 V

Width

9.25mm

Transistor Material

Si

Height

4.4mm

Minimum Operating Temperature

-55 °C

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