Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK IRF540NSTRLPBF
- RS Stock No.:
- 831-2831P
- Mfr. Part No.:
- IRF540NSTRLPBF
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
£7.83
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£9.40
(inc. VAT)
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In Stock
- 32,960 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 + | £0.783 |
*price indicative
- RS Stock No.:
- 831-2831P
- Mfr. Part No.:
- IRF540NSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 33 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 44 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 130 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Width | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 71 nC @ 10 V | |
| Height | 4.83mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 44 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 71 nC @ 10 V | ||
Height 4.83mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRLPBF
This high power MOSFET is designed for efficiency and reliability across a variety of applications. Featuring an N-channel configuration, it operates in enhancement mode with a maximum continuous drain current of 33A and a breakdown voltage of 100V. Its surface mount design allows for simple integration into printed circuit boards, enhancing versatility in modern applications.
Features & Benefits
• Low Rds(on) of 44mΩ improves circuit efficiency
• High power dissipation capability of 130W supports robust applications
• Fast switching speed minimises energy loss during operation
• Wide operating temperature range from -55°C to +175°C suits diverse environments
• Lead-free construction adheres to contemporary environmental standards
• High power dissipation capability of 130W supports robust applications
• Fast switching speed minimises energy loss during operation
• Wide operating temperature range from -55°C to +175°C suits diverse environments
• Lead-free construction adheres to contemporary environmental standards
Applications
• Power management in automation systems
• High-efficiency power supplies for electronics
• Motor control in electrical engineering
• Renewable energy systems for effective energy conversion
• High-efficiency power supplies for electronics
• Motor control in electrical engineering
• Renewable energy systems for effective energy conversion
What is the maximum gate-to-source voltage for this device?
The maximum gate-to-source voltage is ±20V, allowing for safe operation in typical circuits.
How does this device handle thermal management?
With a maximum power dissipation of 130W and a junction-to-case thermal resistance of 1.15°C/W, it effectively manages heat during operation.
What is the typical gate charge at 10V?
The typical gate charge at a gate-to-source voltage of 10V is 71 nC, ensuring quick response times in switching applications.
Can this device be mounted on standard PCBs?
Yes, it is designed in a D2PAK package, making it suitable for surface mount applications on standard PCB layouts.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
