N-Channel MOSFET, 57 A, 25 V, 3-Pin DPAK Infineon IRLR8259TRPBF

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RS will no longer stock this product.
Packaging Options:
RS Stock No.:
830-3391
Mfr. Part No.:
IRLR8259TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

25 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Typical Gate Charge @ Vgs

6.8 nC @ 4.5 V

Length

6.73mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Height

2.39mm

Minimum Operating Temperature

-55 °C

Series

HEXFET

COO (Country of Origin):
CN

N-Channel Power MOSFET 12V to 25V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.