Infineon HEXFET N-Channel MOSFET, 161 A, 30 V, 3-Pin DPAK IRLR7843TRPBF
- RS Stock No.:
- 830-3382P
- Mfr. Part No.:
- IRLR7843TRPBF
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
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In Stock
- 13,900 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 + | £0.452 |
*price indicative
- RS Stock No.:
- 830-3382P
- Mfr. Part No.:
- IRLR7843TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 161 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | DPAK (TO-252) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 1.4V | |
| Maximum Power Dissipation | 140 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 34 nC @ 4.5 V | |
| Forward Diode Voltage | 1V | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 161 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.4V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 34 nC @ 4.5 V | ||
Forward Diode Voltage 1V | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 161A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRLR7843TRPBF
This MOSFET is tailored for high-performance applications in the electrical and electronics sectors, especially suitable for automotive and industrial needs. Its HEXFET technology ensures impressive efficiency and reliability, making it ideal for high-frequency synchronous buck converters and isolated DC-DC converters. The device effectively manages power dissipation, enhancing the performance of electronic systems.
Features & Benefits
• Extremely low RDS(on) optimises power loss and efficiency
• High continuous drain current rating supports intensive applications
• Designed for high operating temperatures to ensure performance
• Lead-free construction meets environmentally conscious design standards
• Low gate charge improves switching behaviour in circuits
• High continuous drain current rating supports intensive applications
• Designed for high operating temperatures to ensure performance
• Lead-free construction meets environmentally conscious design standards
• Low gate charge improves switching behaviour in circuits
Applications
• Used in high-frequency synchronous buck converters
• Employed in isolated DC-DC converters for telecom systems
• Serves automotive power management systems
• Suitable for industrial power supplies requiring enhanced efficiency
• Ideal for power regulation in computer processors
• Employed in isolated DC-DC converters for telecom systems
• Serves automotive power management systems
• Suitable for industrial power supplies requiring enhanced efficiency
• Ideal for power regulation in computer processors
What are the typical thermal performance characteristics?
The maximum operating temperature is +175°C with a thermal resistance of 50°C/W from junction to ambient, ensuring effective performance in thermal environments.
How does the low RDS(on) affect overall circuit design?
Low RDS(on) reduces conduction losses, leading to improved efficiency under varying load conditions, which is crucial for high-performance designs.
Can it handle pulse currents effectively?
Yes, it can accommodate pulsed drain currents of up to 620 A, ensuring operational reliability under dynamic loads.
What mounting methods are compatible with this component?
As a surface mount component in DPAK package, it is suitable for automated assembly processes.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
