N-Channel MOSFET, 25 A, 55 V, 3-Pin DPAK Infineon IRLR3105PBF
- RS Stock No.:
- 830-3366
- Mfr. Part No.:
- IRLR3105PBF
- Brand:
- Infineon
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- RS Stock No.:
- 830-3366
- Mfr. Part No.:
- IRLR3105PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 43 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 57 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Typical Gate Charge @ Vgs | 20 nC @ 5 V | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 43 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 57 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 20 nC @ 5 V | ||
Length 6.73mm | ||
Height 2.39mm | ||
Series HEXFET | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 25A Maximum Continuous Drain Current, 57W Maximum Power Dissipation - IRLR3105TRPBF
This MOSFET is intended for high-performance applications where electrical power control is critical. It provides efficient switching and effective thermal management, functioning within a wide temperature range, thus making it an advantageous choice for professionals in automation, electronics, and electrical sectors.
Features & Benefits
• Improves efficiency with low Rds(on) for reduced power loss
• Supports a maximum continuous drain current of 25A
• Allows dual gate-source voltage levels for added flexibility
• Maintains thermal stability with a maximum operating temperature of +175°C
• Compact DPAK TO-252 package ensures straightforward surface mounting
• Designed for Rapid switching speeds for enhanced performance
Applications
• Controls motor drives in automation systems
• Utilised in power management circuits for energy efficiency
• Integrated into DC-DC converters for electronic devices
• Suitable for industrial equipment demanding high reliability
• Employed in battery management systems for optimal operation
What is the operating temperature range?
The operating temperature range is -55°C to +175°C, offering versatility across various environments.
How does it handle switching speed?
It is built for fast switching, ensuring high performance in applications necessitating quick on-off cycles.
What type of mounting does it support?
This device is designed for surface mount applications using vapour phase, infrared, or wave soldering techniques.
Can it be used in high-voltage applications?
Yes, it operates with a maximum drain-source voltage of 55V, making it apt for high-voltage circuits.
What considerations should be MADE for power dissipation?
Power dissipation can reach up to 57W, with a derating factor of 0.38W/°C to ensure safe operation in various thermal conditions.