Infineon HEXFET N-Channel MOSFET, 39 A, 80 V, 3-Pin DPAK IRLR2908TRPBF
- RS Stock No.:
- 830-3354P
- Mfr. Part No.:
- IRLR2908TRPBF
- Brand:
- Infineon
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Subtotal 50 units (supplied on a continuous strip)*
£33.80
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Units | Per unit |
|---|---|
| 50 - 90 | £0.676 |
| 100 - 240 | £0.633 |
| 250 - 490 | £0.591 |
| 500 + | £0.539 |
*price indicative
- RS Stock No.:
- 830-3354P
- Mfr. Part No.:
- IRLR2908TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 39 A | |
| Maximum Drain Source Voltage | 80 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 30 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 120 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 22 nC @ 4.5 V | |
| Height | 2.39mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 39 A | ||
Maximum Drain Source Voltage 80 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 30 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 120 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 6.22mm | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 22 nC @ 4.5 V | ||
Height 2.39mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 39A Maximum Continuous Drain Current, 120W Maximum Power Dissipation - IRLR2908TRPBF
This MOSFET is designed for versatility and efficiency across various applications that demand precise current control, particularly in space-constrained environments. Thanks to its HEXFET technology, it maintains effective performance at high temperatures, making it a suitable option for contemporary electronic and electrical systems. Its ability to manage significant power dissipation while operating in challenging conditions adds to its relevance.
Features & Benefits
• Continuous drain current capability of up to 39A for demanding load applications
• Maximum drain-source voltage of 80V for enhanced reliability
• Low on-resistance of 30mΩ for improved energy efficiency
• Operates at high temperatures up to +175°C for rigorous environments
• Surface mount design facilitates easy installation and assembly
• Enhancement mode offers improved control for varied circuitry
• Maximum drain-source voltage of 80V for enhanced reliability
• Low on-resistance of 30mΩ for improved energy efficiency
• Operates at high temperatures up to +175°C for rigorous environments
• Surface mount design facilitates easy installation and assembly
• Enhancement mode offers improved control for varied circuitry
Applications
• Employed in power supply circuits for effective switching
• Suitable for motor control requiring accurate current regulation
• Utilised within automotive systems for efficient power management
• Ideal for high-frequency switching circuits to enhance efficiency
• Adopted in industrial automation systems for superior performance
• Suitable for motor control requiring accurate current regulation
• Utilised within automotive systems for efficient power management
• Ideal for high-frequency switching circuits to enhance efficiency
• Adopted in industrial automation systems for superior performance
What are the thermal characteristics of this component?
The thermal resistance junction-to-case is approximately 1.3°C/W, which supports effective heat dissipation during operation, essential for maintaining optimal performance and reliability.
How do I ensure proper installation for optimal performance?
It is important to adhere to suitable PCB design guidelines, particularly focusing on minimising inductance and maximising thermal contact with the substrate to prevent overheating during operation.
Can it handle pulsed currents effectively?
Yes, it can support pulsed drain currents up to 150A, enabling management of transient conditions without compromising the device's integrity.
What is the significance of the RDS(on) value in operations?
The low RDS(on) value of 30mΩ is important as it reduces power losses during switching, enhancing overall circuit efficiency and performance.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
