Name: Infineon HEXFET P-Channel MOSFET, 780 mA, 20 V, 3-Pin Micro6 IRLML6302GTRPBF
Brand: Infineon
SKU: 830-3310
Price: 0.30 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	780 mA
	Maximum Drain Source Voltage	20 V
	Series	HEXFET
	Package Type	Micro6
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	900 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.5V
	Minimum Gate Threshold Voltage	0.7V
	Maximum Power Dissipation	540 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-12 V, +12 V
	Transistor Material	Si
	Width	1.4mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	2.4 nC @ 4.5 V
	Length	3.04mm
	Height	1.02mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 780 mA
	Maximum Drain Source Voltage 20 V
	Series HEXFET
	Package Type Micro6
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 900 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.5V
	Minimum Gate Threshold Voltage 0.7V
	Maximum Power Dissipation 540 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -12 V, +12 V
	Transistor Material Si
	Width 1.4mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 2.4 nC @ 4.5 V
	Length 3.04mm
	Height 1.02mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: CN

Infineon HEXFET P-Channel MOSFET, 780 mA, 20 V, 3-Pin Micro6 IRLML6302GTRPBF

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