N-Channel MOSFET, 24 A, 80 V, 5-Pin M246 STMicroelectronics LET9180
- RS Stock No.:
- 829-6956
- Mfr. Part No.:
- LET9180
- Brand:
- STMicroelectronics
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 829-6956
- Mfr. Part No.:
- LET9180
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 24 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | M246 | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 318 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -10 V, +15 V | |
| Number of Elements per Chip | 1 | |
| Width | 5.97mm | |
| Maximum Operating Temperature | +200 °C | |
| Length | 29.08mm | |
| Transistor Material | Si | |
| Height | 5.08mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type M246 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 318 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +15 V | ||
Number of Elements per Chip 1 | ||
Width 5.97mm | ||
Maximum Operating Temperature +200 °C | ||
Length 29.08mm | ||
Transistor Material Si | ||
Height 5.08mm | ||
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
