STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 2 A, 800 V, 3-Pin TO-220 STP2N80K5
- RS Stock No.:
- 829-4424P
- Mfr. Part No.:
- STP2N80K5
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 25 units (supplied in a tube)*
£11.55
(exc. VAT)
£13.85
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 45 | £0.462 |
| 50 - 120 | £0.45 |
| 125 - 245 | £0.438 |
| 250 + | £0.428 |
*price indicative
- RS Stock No.:
- 829-4424P
- Mfr. Part No.:
- STP2N80K5
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220 | |
| Series | MDmesh K5, SuperMESH5 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +30 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 9.5 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 4.6mm | |
| Height | 15.75mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220 | ||
Series MDmesh K5, SuperMESH5 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +30 V | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 9.5 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 4.6mm | ||
Height 15.75mm | ||
Minimum Operating Temperature -55 °C | ||
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics