N-Channel MOSFET, 6.2 A, 600 V, 3-Pin TO-220SIS Toshiba TK6A60W,S4VX(M
- RS Stock No.:
- 827-6261
- Mfr. Part No.:
- TK6A60W,S4VX(M
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
£3.52
(exc. VAT)
£4.225
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £0.704 | £3.52 |
| 25 - 70 | £0.62 | £3.10 |
| 75 - 170 | £0.542 | £2.71 |
| 175 - 345 | £0.506 | £2.53 |
| 350 + | £0.478 | £2.39 |
*price indicative
- RS Stock No.:
- 827-6261
- Mfr. Part No.:
- TK6A60W,S4VX(M
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6.2 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220SIS | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 750 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Maximum Power Dissipation | 30 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 10mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.5mm | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Series | TK | |
| Height | 15mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.2 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220SIS | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 750 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Maximum Power Dissipation 30 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 10mm | ||
Number of Elements per Chip 1 | ||
Width 4.5mm | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Series TK | ||
Height 15mm | ||
- COO (Country of Origin):
- MY