N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Infineon IPB019N06L3GATMA1

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Packaging Options:
RS Stock No.:
827-5293
Mfr. Part No.:
IPB019N06L3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Typical Gate Charge @ Vgs

125 nC @ 4.5 V

Length

10.31mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Height

4.57mm

RoHS Status: Exempt

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