Name: N-Channel MOSFET, 100 A, 100 V, 3-Pin D2PAK Infineon IPB042N10N3GATMA1
Brand: Infineon
SKU: 827-5237
Price: 2.06 GBP
Availability: OutOfStock

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	100 A
	Maximum Drain Source Voltage	100 V
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	7.4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	214 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	88 nC @ 10 V
	Length	10.31mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Width	9.45mm
	Transistor Material	Si
	Height	4.57mm
	Series	OptiMOS 3
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 100 A
	Maximum Drain Source Voltage 100 V
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 7.4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 214 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 88 nC @ 10 V
	Length 10.31mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Width 9.45mm
	Transistor Material Si
	Height 4.57mm
	Series OptiMOS 3
	Minimum Operating Temperature -55 °C

RoHS Status: Exempt

N-Channel MOSFET, 100 A, 100 V, 3-Pin D2PAK Infineon IPB042N10N3GATMA1

Be the first to know about our latest products and offers