N-Channel MOSFET, 100 A, 100 V, 3-Pin D2PAK Infineon IPB042N10N3GATMA1

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
827-5237
Mfr. Part No.:
IPB042N10N3GATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

214 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

88 nC @ 10 V

Length

10.31mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Width

9.45mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

Series

OptiMOS 3

RoHS Status: Exempt