N-Channel MOSFET, 13.8 A, 700 V, 3-Pin D2PAK Infineon IPB65R280C6ATMA1
- RS Stock No.:
- 827-5164
- Mfr. Part No.:
- IPB65R280C6ATMA1
- Brand:
- Infineon
- RS Stock No.:
- 827-5164
- Mfr. Part No.:
- IPB65R280C6ATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 13.8 A | |
Maximum Drain Source Voltage | 700 V | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 280 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 104 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Width | 9.45mm | |
Typical Gate Charge @ Vgs | 45 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Length | 10.31mm | |
Number of Elements per Chip | 1 | |
Series | CoolMOS C6 | |
Minimum Operating Temperature | -55 °C | |
Height | 4.57mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 13.8 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 280 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 104 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 9.45mm | ||
Typical Gate Charge @ Vgs 45 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.31mm | ||
Number of Elements per Chip 1 | ||
Series CoolMOS C6 | ||
Minimum Operating Temperature -55 °C | ||
Height 4.57mm | ||
RoHS Status: Exempt