N-Channel MOSFET, 13.8 A, 700 V, 3-Pin D2PAK Infineon IPB65R280C6ATMA1

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
827-5164
Mfr. Part No.:
IPB65R280C6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

13.8 A

Maximum Drain Source Voltage

700 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

9.45mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

10.31mm

Number of Elements per Chip

1

Series

CoolMOS C6

Minimum Operating Temperature

-55 °C

Height

4.57mm

RoHS Status: Exempt

Infineon CoolMOS™C6/C7 Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.