N-Channel MOSFET, 12 A, 550 V, 3-Pin D2PAK Infineon IPB50R299CPATMA1

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RS will no longer stock this product.
Packaging Options:
RS Stock No.:
827-5158
Mfr. Part No.:
IPB50R299CPATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

550 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

299 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.31mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Minimum Operating Temperature

-55 °C

Series

CoolMOS CP

Height

4.572mm