N-Channel MOSFET, 100 A, 55 V, 3-Pin D2PAK Infineon IPB100N06S2L05ATMA1

RS Stock No.:: 827-5091
Mfr. Part No.:: IPB100N06S2L05ATMA1
Brand:: Infineon

N-Channel MOSFET, 100 A, 55 V, 3-Pin D2PAK Infineon IPB100N06S2L05ATMA1

View all MOSFETs

Discontinued product

RS Stock No.:: 827-5091
Mfr. Part No.:: IPB100N06S2L05ATMA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

RoHS Status: Exempt

Product Details

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	55 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	5.9 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.31mm
Typical Gate Charge @ Vgs	170 nC @ 10 V
Width	9.45mm
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Height	4.57mm
Series	OptiMOS
Minimum Operating Temperature	-55 °C