Dual N-Channel MOSFET Module, 120 A, 30 V, 8-Pin SON Texas Instruments CSD87350Q5D
- RS Stock No.:
- 827-4943
- Mfr. Part No.:
- CSD87350Q5D
- Brand:
- Texas Instruments
Bulk discount available
Subtotal (1 pack of 5 units)*
£9.70
(exc. VAT)
£11.65
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.94 | £9.70 |
| 50 - 95 | £1.65 | £8.25 |
| 100 + | £1.328 | £6.64 |
*price indicative
- RS Stock No.:
- 827-4943
- Mfr. Part No.:
- CSD87350Q5D
- Brand:
- Texas Instruments
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1.2 mΩ, 5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 12 W | |
| Transistor Configuration | Series | |
| Maximum Gate Source Voltage | +8 V | |
| Length | 6.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 5.1mm | |
| Typical Gate Charge @ Vgs | 20 nC @ 4.5 V, 8.4 nC @ 4.5 V | |
| Number of Elements per Chip | 2 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
| Series | NexFET | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.2 mΩ, 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 12 W | ||
Transistor Configuration Series | ||
Maximum Gate Source Voltage +8 V | ||
Length 6.1mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 5.1mm | ||
Typical Gate Charge @ Vgs 20 nC @ 4.5 V, 8.4 nC @ 4.5 V | ||
Number of Elements per Chip 2 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Series NexFET | ||