N-Channel MOSFET, 60 A, 25 V, 8-Pin SON Texas Instruments CSD16340Q3
- RS Stock No.:
- 827-4732
- Mfr. Part No.:
- CSD16340Q3
- Brand:
- Texas Instruments
Bulk discount available
Subtotal (1 pack of 5 units)*
£5.25
(exc. VAT)
£6.30
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.05 | £5.25 |
| 50 - 95 | £0.834 | £4.17 |
| 100 - 245 | £0.644 | £3.22 |
| 250 - 495 | £0.60 | £3.00 |
| 500 + | £0.564 | £2.82 |
*price indicative
- RS Stock No.:
- 827-4732
- Mfr. Part No.:
- CSD16340Q3
- Brand:
- Texas Instruments
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | SON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 7.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +10 V | |
| Typical Gate Charge @ Vgs | 6.5 nC @ 4.5 V | |
| Length | 3.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 3.4mm | |
| Number of Elements per Chip | 1 | |
| Series | NexFET | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 25 V | ||
Package Type SON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 7.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +10 V | ||
Typical Gate Charge @ Vgs 6.5 nC @ 4.5 V | ||
Length 3.4mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 3.4mm | ||
Number of Elements per Chip 1 | ||
Series NexFET | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||