Infineon HEXFET N-Channel MOSFET, 43 A, 60 V, 3-Pin I2PAK IRFSL3806PBF
- RS Stock No.:
- 827-4117
- Mfr. Part No.:
- IRFSL3806PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£8.58
(exc. VAT)
£10.30
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.858 | £8.58 |
| 50 - 90 | £0.708 | £7.08 |
| 100 - 240 | £0.616 | £6.16 |
| 250 - 490 | £0.581 | £5.81 |
| 500 + | £0.545 | £5.45 |
*price indicative
- RS Stock No.:
- 827-4117
- Mfr. Part No.:
- IRFSL3806PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 43 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | HEXFET | |
| Package Type | I2PAK (TO-262) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 15.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 71 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.65mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 43 A | ||
Maximum Drain Source Voltage 60 V | ||
Series HEXFET | ||
Package Type I2PAK (TO-262) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 15.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 71 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 9.65mm | ||
- COO (Country of Origin):
- MX