N-Channel MOSFET, 80 A, 75 V, 3-Pin D2PAK Infineon IRFS3607TRLPBF

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
827-4108
Mfr. Part No.:
IRFS3607TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

56 nC @ 10 V

Transistor Material

Si

Width

9.65mm

Length

10.67mm

Height

4.83mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

The Infineon IRFS3607 is the 75V single N-channel HEXFET power MOSFET in a D2-Pak package. Its used for the high efficiency synchronous rectification in SMPS.

Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA