Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK IRFR9024NTRPBF
- RS Stock No.:
- 827-4088P
- Mfr. Part No.:
- IRFR9024NTRPBF
- Brand:
- Infineon
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Subtotal 100 units (supplied on a continuous strip)*
£53.20
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£63.80
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In Stock
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Units | Per unit |
|---|---|
| 100 - 180 | £0.532 |
| 200 - 480 | £0.498 |
| 500 - 980 | £0.463 |
| 1000 + | £0.431 |
*price indicative
- RS Stock No.:
- 827-4088P
- Mfr. Part No.:
- IRFR9024NTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 175 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 38 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.73mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.22mm | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
| Forward Diode Voltage | 1.6V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 175 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 38 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.73mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
Forward Diode Voltage 1.6V | ||
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFR9024NTRPBF
This P-channel MOSFET, utilising HEXFET technology, delivers efficient performance across a range of electronic applications. Its robust attributes make it a crucial component for users in automation, electronics, as well as the electrical and mechanical sectors. The product is adept at managing high current loads while ensuring effective control in power circuits.
Features & Benefits
• Maximum continuous drain current of 11A facilitates high-performance applications
• Can withstand drain-source voltage of up to 55V for increased reliability
• Low RDS(on) of 175 mΩ minimises power loss during operation
• Enhancement mode design optimises efficiency for various uses
• DPAK TO-252 surface mount package simplifies PCB integration and assembly
• Can withstand drain-source voltage of up to 55V for increased reliability
• Low RDS(on) of 175 mΩ minimises power loss during operation
• Enhancement mode design optimises efficiency for various uses
• DPAK TO-252 surface mount package simplifies PCB integration and assembly
Applications
• Effective energy management in power supply circuits
• Suitable for motor control needing high current
• Utilised in DC-DC converters for improved efficiency
• Ideal for load switching due to rapid response times
• Employed in industrial automation systems for added reliability
• Suitable for motor control needing high current
• Utilised in DC-DC converters for improved efficiency
• Ideal for load switching due to rapid response times
• Employed in industrial automation systems for added reliability
What is the maximum power dissipation of this component?
It has a maximum power dissipation capability of 38W.
How does the product handle gate voltages?
The gate can accommodate voltages ranging from -20 V to +20 V, allowing design flexibility.
What is the thermal performance of the device?
It operates safely at a maximum temperature of 150 °C, ensuring reliability in diverse environments.
Is it easy to mount on a PCB?
Yes, the DPAK TO-252 package enables straightforward surface mounting on printed circuit boards.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
