Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK IRFR9024NTRPBF
- RS Stock No.:
- 827-4088P
- Mfr. Part No.:
- IRFR9024NTRPBF
- Brand:
- Infineon
Subtotal 100 units (supplied on a continuous strip)*
£53.20
(exc. VAT)
£63.80
(inc. VAT)
FREE delivery for orders over £50.00
- 10,320 unit(s) ready to ship
| Units | Per unit | 
|---|---|
| 100 - 180 | £0.532 | 
| 200 - 480 | £0.498 | 
| 500 - 980 | £0.463 | 
| 1000 + | £0.431 | 
*price indicative
- RS Stock No.:
- 827-4088P
- Mfr. Part No.:
- IRFR9024NTRPBF
- Brand:
- Infineon
| Select all | Attribute | Value | 
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | DPAK (TO-252) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 175 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 38 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.73mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.22mm | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
| Forward Diode Voltage | 1.6V | |
| Select all | ||
|---|---|---|
| Brand Infineon | ||
| Channel Type P | ||
| Maximum Continuous Drain Current 11 A | ||
| Maximum Drain Source Voltage 55 V | ||
| Package Type DPAK (TO-252) | ||
| Series HEXFET | ||
| Mounting Type Surface Mount | ||
| Pin Count 3 | ||
| Maximum Drain Source Resistance 175 mΩ | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 4V | ||
| Minimum Gate Threshold Voltage 2V | ||
| Maximum Power Dissipation 38 W | ||
| Transistor Configuration Single | ||
| Maximum Gate Source Voltage -20 V, +20 V | ||
| Length 6.73mm | ||
| Transistor Material Si | ||
| Number of Elements per Chip 1 | ||
| Maximum Operating Temperature +150 °C | ||
| Width 6.22mm | ||
| Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
| Minimum Operating Temperature -55 °C | ||
| Height 2.39mm | ||
| Forward Diode Voltage 1.6V | ||
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFR9024NTRPBF
Features & Benefits
• Can withstand drain-source voltage of up to 55V for increased reliability
• Low RDS(on) of 175 mΩ minimises power loss during operation
• Enhancement mode design optimises efficiency for various uses
• DPAK TO-252 surface mount package simplifies PCB integration and assembly
Applications
• Suitable for motor control needing high current
• Utilised in DC-DC converters for improved efficiency
• Ideal for load switching due to rapid response times
• Employed in industrial automation systems for added reliability


