Infineon HEXFET P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRPBF
- RS Stock No.:
- 827-4072P
- Mfr. Part No.:
- IRFR5505TRPBF
- Brand:
- Infineon
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Subtotal 100 units (supplied on a continuous strip)*
£54.40
(exc. VAT)
£65.30
(inc. VAT)
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In Stock
- 5,220 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 100 - 180 | £0.544 |
| 200 - 480 | £0.521 |
| 500 - 980 | £0.486 |
| 1000 + | £0.458 |
*price indicative
- RS Stock No.:
- 827-4072P
- Mfr. Part No.:
- IRFR5505TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 57 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 57 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.22mm | ||
Transistor Material Si | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
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