N-Channel MOSFET, 2.6 A, 150 V, 3 + Tab-Pin SOT-223 Infineon IRFL4315PBF
- RS Stock No.:
- 827-4007
- Mfr. Part No.:
- IRFL4315PBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 827-4007
- Mfr. Part No.:
- IRFL4315PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.6 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 + Tab | |
| Maximum Drain Source Resistance | 185 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 2.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Width | 3.7mm | |
| Transistor Material | Si | |
| Length | 6.7mm | |
| Number of Elements per Chip | 1 | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.8mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.6 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 + Tab | ||
Maximum Drain Source Resistance 185 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 2.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Width 3.7mm | ||
Transistor Material Si | ||
Length 6.7mm | ||
Number of Elements per Chip 1 | ||
Series HEXFET | ||
Minimum Operating Temperature -55 °C | ||
Height 1.8mm | ||
Infineon HEXFET Series MOSFET, 2.6A Maximum Continuous Drain Current, 2.8W Maximum Power Dissipation - IRFL4315TRPBF
This MOSFET is suitable for power applications, delivering solid performance and enhanced reliability in various environments. As a key component in switching applications, it enables efficient control of power delivery. Its surface mount design makes it a good fit for high-performance circuits that require low gate-to-drain charge, minimising switching losses, which is beneficial for users in the automation and electronics industries.
Features & Benefits
• Continuous drain current rating of 2.6A accommodates a range of applications
• Maximum drain-source voltage of 150V facilitates high-power operations
• Low Rds(on) of 185mΩ improves energy efficiency
• Operating temperature range from -55°C to +150°C supports dependable performance
• Gate threshold voltage is optimised for easier circuit design
• Fully characterised avalanche characteristics provide additional protection
Applications
• High-frequency DC-DC converters
• Power management systems for improved efficiency
• Switching power supplies for enhanced performance
What is the significance of the low Rds(on) value?
A low Rds(on) reduces power losses during operation, improving overall efficiency across multiple applications.
How does the wide temperature range affect usage?
The wide operating temperature range ensures reliable performance in extreme conditions, making it suitable for diverse environments.
Can it be used in both high and low-frequency applications?
Yes, it accommodates both high-frequency DC-DC converters and applications requiring low-frequency switching.
What should be considered for installation?
Proper circuit layout and thermal management should be taken into account to optimise performance during installation.
How does the gate threshold voltage impact circuit design?
The gate threshold voltage allows for better control over switching behaviour, facilitating easier design of the driving circuit.