Infineon HEXFET N-Channel MOSFET, 72 A, 100 V, 3-Pin TO-220AB FP IRFI4110GPBF

RS Stock No.:: 827-3962
Mfr. Part No.:: IRFI4110GPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 72 A, 100 V, 3-Pin TO-220AB FP IRFI4110GPBF

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£7.26

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£8.72

(inc. VAT)

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Units	Per unit	Per Pack*
2 +	£3.63	£7.26

*price indicative

RS Stock No.:: 827-3962
Mfr. Part No.:: IRFI4110GPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	72 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220AB FP
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	4.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	61 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Length	10.75mm
	Width	4.83mm
	Typical Gate Charge @ Vgs	190 nC @ 10 V
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	16.13mm
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 72 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220AB FP
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 4.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 61 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Length 10.75mm
	Width 4.83mm
	Typical Gate Charge @ Vgs 190 nC @ 10 V
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 16.13mm
	Forward Diode Voltage 1.3V

COO (Country of Origin):: CN

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 72A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IRFI4110GPBF

This n-channel MOSFET is designed for high-performance applications, providing efficient current handling and high voltage tolerance. It is essential in various electronic devices and ensures robust operation in challenging environments. Its performance in power switching and thermal management makes it a preferred component in the automation, electronics, and mechanical sectors.

Features & Benefits

• Continuous drain current capability of 72A
• Low Rds(on) resistance for enhanced operational efficiency
• Enhancement mode for effective performance
• Maximum drain-source voltage rating of 100V
• Excellent thermal management up to +175°C
• Improved avalanche ruggedness for added reliability

Applications

• Suitable for high-efficiency synchronous rectification
• Ideal for uninterruptible power supply systems
• Compatible with high-speed power switching
• Utilised in hard-switched and high-frequency circuits

What is the maximum continuous drain current for your application?

The continuous drain current is rated at 72A under optimal conditions, making it suitable for demanding applications.

What is the significance of the gate threshold voltage?

The gate threshold voltage ranges from 2V to 4V, enabling precise control of the switching characteristics.

How does the MOSFET manage thermal performance?

It has a maximum operating temperature rating of +175°C, which supports durability in high-temperature environments.

What advantages does low Rds(on) offer in device performance?

Low Rds(on) decreases power losses during switching, leading to improved overall efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.