Infineon HEXFET N-Channel MOSFET, 98 A, 200 V, 3-Pin TO-273AA IRFBA90N20DPBF

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RS will no longer stock this product.
Packaging Options:
RS Stock No.:
827-3950
Mfr. Part No.:
IRFBA90N20DPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

98 A

Maximum Drain Source Voltage

200 V

Package Type

TO-273AA

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

650 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5mm

Length

11mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

16.5mm

COO (Country of Origin):
MX