Infineon HEXFET N-Channel MOSFET, 160 A, 60 V, 3-Pin TO-220AB IRFB3306GPBF

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
827-3940
Mfr. Part No.:
IRFB3306GPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

160 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

85 nC @ 10 V

Length

10.67mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

16.51mm

COO (Country of Origin):
PH