N-Channel MOSFET, 14 A, 30 V, 8-Pin SOIC Infineon IRF8714TRPBF
- RS Stock No.:
- 827-3900
- Mfr. Part No.:
- IRF8714TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£8.56
(exc. VAT)
£10.28
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.428 | £8.56 |
| 100 - 480 | £0.258 | £5.16 |
| 500 - 1980 | £0.233 | £4.66 |
| 2000 - 3980 | £0.208 | £4.16 |
| 4000 + | £0.19 | £3.80 |
*price indicative
- RS Stock No.:
- 827-3900
- Mfr. Part No.:
- IRF8714TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 13 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 8.1 nC @ 4.5 V | |
| Width | 4mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | HEXFET | |
| Height | 1.5mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 13 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 8.1 nC @ 4.5 V | ||
Width 4mm | ||
Minimum Operating Temperature -55 °C | ||
Series HEXFET | ||
Height 1.5mm | ||
- COO (Country of Origin):
- TH