Infineon SIPMOS N-Channel MOSFET, 260 mA, 240 V, 3-Pin SOT-89 BSS87H6327XTSA1

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Packaging Options:
RS Stock No.:
827-0074
Mfr. Part No.:
BSS87H6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

240 V

Package Type

SOT-89

Series

SIPMOS

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

3.7 nC @ 10 V

Length

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Width

2.5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.