N-Channel MOSFET, 30 A, 30 V, 3-Pin DPAK Infineon IPD30N03S4L14ATMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

11 nC @ 10 V

Width

6.22mm

Length

6.5mm

Height

2.3mm

Minimum Operating Temperature

-55 °C

Series

OptiMOS T2