N-Channel MOSFET, 3.7 A, 30 V, 3-Pin SOT-346 Infineon BSR302NL6327HTSA1
- RS Stock No.:
- 826-9392
- Mfr. Part No.:
- BSR302NL6327HTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 100 units)*
£18.30
(exc. VAT)
£22.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | £0.183 | £18.30 |
| 500 - 900 | £0.152 | £15.20 |
| 1000 - 1400 | £0.132 | £13.20 |
| 1500 - 2900 | £0.122 | £12.20 |
| 3000 + | £0.112 | £11.20 |
*price indicative
- RS Stock No.:
- 826-9392
- Mfr. Part No.:
- BSR302NL6327HTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.7 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-346 (SC-59) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 36 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 3mm | |
| Typical Gate Charge @ Vgs | 4.4 nC @ 5 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.6mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Series | OptiMOS 2 | |
| Height | 1.1mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.7 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-346 (SC-59) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 36 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3mm | ||
Typical Gate Charge @ Vgs 4.4 nC @ 5 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 1.6mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Series OptiMOS 2 | ||
Height 1.1mm | ||