Name: P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK Infineon IPD50P04P4L11ATMA1
Brand: Infineon
SKU: 826-9112
Price: 0.84 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	50 A
	Maximum Drain Source Voltage	40 V
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	17.2 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.2V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	58 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Width	6.22mm
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	45 nC @ 10 V
	Length	6.5mm
	Series	OptiMOS P
	Minimum Operating Temperature	-55 °C
	Height	2.3mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 50 A
	Maximum Drain Source Voltage 40 V
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 17.2 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.2V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 58 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Width 6.22mm
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 45 nC @ 10 V
	Length 6.5mm
	Series OptiMOS P
	Minimum Operating Temperature -55 °C
	Height 2.3mm

RoHS Status: Exempt

P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK Infineon IPD50P04P4L11ATMA1

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