Infineon OptiMOS 3 N-Channel MOSFET, 58 A, 100 V, 3-Pin D2PAK IPB123N10N3GATMA1
- RS Stock No.:
- 826-9036
- Mfr. Part No.:
- IPB123N10N3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£23.08
(exc. VAT)
£27.70
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | £1.154 | £23.08 |
| 200 + | £0.916 | £18.32 |
*price indicative
- RS Stock No.:
- 826-9036
- Mfr. Part No.:
- IPB123N10N3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 58 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | OptiMOS 3 | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 23.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 94 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 9.45mm | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.31mm | |
| Typical Gate Charge @ Vgs | 26 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.57mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 58 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS 3 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 23.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 94 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 9.45mm | ||
Maximum Operating Temperature +175 °C | ||
Length 10.31mm | ||
Typical Gate Charge @ Vgs 26 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.57mm | ||