Name: Infineon OptiMOS 3 N-Channel MOSFET, 58 A, 100 V, 3-Pin D2PAK IPB123N10N3GATMA1
Brand: Infineon
SKU: 826-9036
Price: 1.39 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	58 A
	Maximum Drain Source Voltage	100 V
	Series	OptiMOS 3
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	23.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	94 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Length	10.31mm
	Number of Elements per Chip	1
	Width	9.45mm
	Typical Gate Charge @ Vgs	26 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Height	4.57mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 58 A
	Maximum Drain Source Voltage 100 V
	Series OptiMOS 3
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 23.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 94 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Length 10.31mm
	Number of Elements per Chip 1
	Width 9.45mm
	Typical Gate Charge @ Vgs 26 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Height 4.57mm
	Minimum Operating Temperature -55 °C

Infineon OptiMOS 3 N-Channel MOSFET, 58 A, 100 V, 3-Pin D2PAK IPB123N10N3GATMA1

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