N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S209ATMA1

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
826-9011
Mfr. Part No.:
IPB80N06S209ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

9.25mm

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Height

4.4mm

Series

OptiMOS

Minimum Operating Temperature

-55 °C

RoHS Status: Exempt