N-Channel MOSFET, 21 A, 150 V, 3-Pin D2PAK Infineon IPB530N15N3GATMA1
- RS Stock No.:
- 826-8982
- Mfr. Part No.:
- IPB530N15N3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£19.28
(exc. VAT)
£23.14
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.964 | £19.28 |
| 100 - 380 | £0.69 | £13.80 |
| 400 - 980 | £0.609 | £12.18 |
| 1000 + | £0.558 | £11.16 |
*price indicative
- RS Stock No.:
- 826-8982
- Mfr. Part No.:
- IPB530N15N3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 53 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 68 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 9.45mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.31mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 8.7 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Series | OptiMOS 3 | |
| Height | 4.57mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 53 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 68 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 9.45mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.31mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 8.7 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Series OptiMOS 3 | ||
Height 4.57mm | ||