N-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK Infineon IPB80N03S4L02ATMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

110 nC @ 10 V

Length

10mm

Width

9.25mm

Transistor Material

Si

Height

4.4mm

Minimum Operating Temperature

-55 °C

Series

OptiMOS T2