Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 4.9 A, 6.5 A, 30 V, 8-Pin SOIC IRF7319TRPBF
- RS Stock No.:
- 826-8879P
- Mfr. Part No.:
- IRF7319TRPBF
- Brand:
- Infineon
Subtotal 100 units (supplied on a continuous strip)*
£63.10
(exc. VAT)
£75.70
(inc. VAT)
FREE delivery for orders over £50.00
- 3,040 unit(s) ready to ship
| Units | Per unit | 
|---|---|
| 100 - 180 | £0.631 | 
| 200 - 480 | £0.59 | 
| 500 - 980 | £0.55 | 
| 1000 + | £0.508 | 
*price indicative
- RS Stock No.:
- 826-8879P
- Mfr. Part No.:
- IRF7319TRPBF
- Brand:
- Infineon
| Select all | Attribute | Value | 
|---|---|---|
| Brand | Infineon | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 4.9 A, 6.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 46 mΩ, 98 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V, 23 nC @ 10 V | |
| Length | 5mm | |
| Transistor Material | Si | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
| Brand Infineon | ||
| Channel Type N, P | ||
| Maximum Continuous Drain Current 4.9 A, 6.5 A | ||
| Maximum Drain Source Voltage 30 V | ||
| Series HEXFET | ||
| Package Type SOIC | ||
| Mounting Type Surface Mount | ||
| Pin Count 8 | ||
| Maximum Drain Source Resistance 46 mΩ, 98 mΩ | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 1V | ||
| Minimum Gate Threshold Voltage 1V | ||
| Maximum Power Dissipation 2 W | ||
| Transistor Configuration Isolated | ||
| Maximum Gate Source Voltage -20 V, +20 V | ||
| Maximum Operating Temperature +150 °C | ||
| Number of Elements per Chip 2 | ||
| Width 4mm | ||
| Typical Gate Charge @ Vgs 22 nC @ 10 V, 23 nC @ 10 V | ||
| Length 5mm | ||
| Transistor Material Si | ||
| Height 1.5mm | ||
| Minimum Operating Temperature -55 °C | ||


