Name: Dual N/P-Channel MOSFET, 4.7 A, 5.7 A, 20 V, 8-Pin SOIC Infineon IRF7307TRPBF
Brand: Infineon
SKU: 826-8857
Price: 0.74 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N, P
	Maximum Continuous Drain Current	4.7 A, 5.7 A
	Maximum Drain Source Voltage	20 V
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	70 mΩ, 140 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	0.7V
	Minimum Gate Threshold Voltage	0.7V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-12 V, +12 V
	Number of Elements per Chip	2
	Typical Gate Charge @ Vgs	20 nC @ 4.5 V, 22 nC @ 4.5 V
	Length	5mm
	Maximum Operating Temperature	+150 °C
	Width	4mm
	Transistor Material	Si
	Height	1.5mm
	Minimum Operating Temperature	-55 °C
	Series	HEXFET

	Select all
	Brand Infineon
	Channel Type N, P
	Maximum Continuous Drain Current 4.7 A, 5.7 A
	Maximum Drain Source Voltage 20 V
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 70 mΩ, 140 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 0.7V
	Minimum Gate Threshold Voltage 0.7V
	Maximum Power Dissipation 2 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -12 V, +12 V
	Number of Elements per Chip 2
	Typical Gate Charge @ Vgs 20 nC @ 4.5 V, 22 nC @ 4.5 V
	Length 5mm
	Maximum Operating Temperature +150 °C
	Width 4mm
	Transistor Material Si
	Height 1.5mm
	Minimum Operating Temperature -55 °C
	Series HEXFET

COO (Country of Origin):: MY

Dual N/P-Channel MOSFET, 4.7 A, 5.7 A, 20 V, 8-Pin SOIC Infineon IRF7307TRPBF

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